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Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/ IF Amp Technical Data
IAM-82008
Features
* RF-IF Conversion Gain: 15 dB from 0.05-5 GHz * IF Conversion Gain from DC to 2 GHz * IF Output P1dB: +8 dBm Typical * Single Polarity Bias Supply: VCC = 7 to 13 V * Load Insensitive Performance * Conversion Gain Flat over Temperature
low LO power. Typical applications include frequency down-conversion, up-conversion, modulation, demodulation, and phase detection. Markets include fiber-optics, GPS satellite navigation, mobile radio, and communications transmitters and receivers. The IAM series of Gilbert multiplier-based frequency converters is fabricated using Hewlett Packard's 10 GHz fT 25 GHz fMAX ISOSATTM-1 silicon bipolar process. This process uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Plastic SO-8 Package
Functional Block Diagram and Pin Configuration
1 2 3 4 8 7 6 5
Description
Hewlett-Packard's IAM-82008 is a complete moderate-power doublebalanced active mixer housed in a miniature low cost surface mount package. It is designed for narrow or wide bandwidth commercial and industrial applications having RF inputs up to 5 GHz. Operation of RF and LO frequencies below 50 MHz can be achieved using optional external capacitors to ground. The IAM-82008 is particularly well suited for applications that require loadinsensitive conversion gain and good spurious signal suppression and moderate dynamic range with
Pin Description 1 2 3 4 IF Output Vee, AC Ground Vee, AC Ground Thermal Contact RF Input 8 7 6 5 RF Ground (optional) VCC LO Ground (optional) LO Input
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5965-9112E
Absolute Maximum Ratings[1] (TA = 25C)
Symbol Vd Pt Pin RF Pin LO Tj TSTG jc Parameter Device Voltage Total Device Dissipation[2] RF Input Power LO Input Power Junction Temperature Storage Temperature Thermal Resistance Junction to Case[3] Units V mW dBm dBm C C C/W Value 15 1200 +14 +14 150 -65 to +150 92
G C (dB)
20
15 IF = 70 MHz
10
IF = 2 GHz 5
0 0.1
0.2
0.5
1.0
2.0
5.0
10
RF FREQUENCY (GHz)
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Derate at 10.9 mW/C for TPIN 3 > 40C. 3. Tj = 150C.
Figure 1. Typical RF to IF Conversion Gain vs. RF Frequency, TA = 25C, Low Side LO.
IAM-82008 Electrical Specifications
VCC = 10 V, ZO = 50 , LO = 0 dBm, RF = -20 dBm, TA = 25C Symbol GC f3 dB RF f3 dB IF P1 dB IP3 NF VSWR Parameter Conversion Gain, RF = 2 GHz, LO = 1.75 GHz RF Bandwidth (GC 3 dB down), IF = 250 MHz IF Bandwidth (GC 3 dB down), LO = 2 GHz Output Power at 1 dB Gain Compression, RF = 2 GHz, LO = 1.75 GHz Third Order Inpercept Point, RF = 2 GHz, LO = 1.75 GHz SSB Noise Figure RF Port VSWR LO Port VSWR IF Port VSWR RFif LOif LOrf ICC RF Feedthrough at IF Port LO Leakage at IF Port LO Leakage at RF Port Supply Current dBc dBm dBm mA 40 Units dB Minimum 13 Typical 15 Maximum 17
GHz GHz dBm dBm dB
5.5 0.5 8 18 19 1.5:1 2.0:1 2.5:1 -30 -15 -22 55 65
Note: 1. The recommended operating voltage range for this device is 7 to 13 V. Typical performance as a function of voltage is shown on the following page.
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20
20
100
C BLOCK IF OUTPUT
1 2
8 7 6 5
C BLOCK
OPTIONAL LOW FREQUENCIES RF GROUND V cc = 10 V
G (dB)
15
15
75 GC I CC 50
4
RF INPUT C BLOCK
C BLOCK
LO INPUT
5 5 P 1dB 0 0 0 4 8 VCC (V) 12 16 20 0 25
Notes: 1. No external baluns are required. 2. Good heatsinking required on Pin 3 for specified performance. Figure 2. IAM-82008 Typical Biasing Configuration.
C
10
10
Figure 3. Typical Conversion Gain, IF P1 dB , and ICC Current vs. VCC Bias Voltage, TA = 25C, RF: -20 dBm at 2 GHz, LO: 0 dBm at 1.75 GHz.
20 LO = 2 GHz 16
4:1 LO IF RF
20
15
80
GC 15
IF P 1dB (dBm)
10 P1dB 5 I CC
70
3:1
G (dB)
GC (dB) 12 HIGH SIDE LO = LOW SIDE LO = 8
IF 2:1 LO
C
10
60
5
4
0
50
RF
0 .01
0.1 IF FREQUENCY, RF-LO (GHz)
1.0
2.0
1:1 0.1
0
1.0 FREQUENCY (GHz) 10
-5 -55
40 -25 0 25 85 125
TEMPERATURE (C)
Figure 4. Typical RF to IF Conversion Gain vs. IF Frequency, TA = 25C, VCC = 10 V, LO: 0 dBm at 2 GHz.
Figure 5. RF, LO, and IF Port VSWR vs. Frequency, TA = 25C, VCC = 10 V.
Figure 6. Typical Conversion Gain, IF P1 dB , and ICC Current vs. Case Temperature, TA = 25C, VCC = 10 V, RF: -20 dBm at 2 GHz, LO: 0 dBm at 1.75 GHz.
0
16
-10
RF TO IF (dBc) LO TO RF AND IF (dBm)
LO to RF
-20 LO to IF -30
14
GC (dB)
HARMONIC LO ORDER
0 1 2 3 4 5
- 12 6 24 22 41 0
21 0 22 18 33 36 1
40 51 41 40 52 55 2
73 60 >75 74 75 >75 3
>75 >75 >75 >75 >75 >75 4
>75 >75 >75 >75 >75 >75 5
-40 RF to IF LO to IF LO to RF 1.0 FREQUENCY (GHz) RF to IF
12
-50
10 -10
-60 0.1
10
-5
0 LO POWER (dBm)
5
10
HARMONIC RF ORDER Xmn = Pif - P(m*rf-n*lo)
Figure 7. Typical RF to IF Conversion Gain vs. LO Power, TA = 25C, VCC = 10 V, RF: -10 dBm at 2 GHz, LO: 0 dBm at 1.75 GHz.
Figure 8. Typical RF Feedthrough Relative to IF Carrier, LO to RF and LO to IF Leakage vs. Frequency, TA = 25C, VCC = 10 V, RF: -20 dBm at 2 GHz, LO: 0 dBm at 1.75 GHz.
Figure 9. Harmonic Intermodulation Suppression (dB Below Desired Output) RF at 1 GHz, LO at 0.752 GHz, IF at 0.248 GHz.
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I CC(mA)
VSWR
ICC (mA)
Vee = 0 V PIN 3 IS ALSO HEATSINK CONTACT
3
C BLOCK
OPTIONAL LOW FREQUENCIES LO GROUND
IF P 1dB, dBm
Part Number Ordering Information
Part Number IAM-82008-TR1 IAM-82008-STR No. of Devices 1000 10 Container 7" Reel Strip
Package Dimensions
SO-8 Plastic Package
1.27 (.050) 6x
3.80/4.00 (.1497/.1574)
M820
5.84/6.20 (.230/.244)
Pin 1 1.35/1.75 (.0532/.0688) 4.72/5.00 (.186/.197)
0.38 0.10 (.015 .004) x 45
0/8
0.10 (.004)
0.33/0.51 (.013/.020) 8X
0.10/0.25 (.004/.0098) 0.41/1.27 (.016/.050)
0.19/0.25 (.0075/.0098)
Note: 1. Dimensions are shown in millimeters (inches).
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O

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